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Research on the Radiation Effects and Compact Model of SiGe HBT

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Research on the Radiation Effects and Compact Model of SiGe HBT

Research on the Radiation Effects and Compact Model of SiGe HBT by Yabin Sun
English | 2018 | ISBN: 9811046115 | 168 Pages | PDF | 18.6 MB
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

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